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| FDFMA2P853 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode September 2008 FDFMA2P853 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal perfo rmance for it's physica and is well suited to linear l size mode applications. Features MOSFET: -3.0 A, -20V. RDS(ON) = 120 m RDS(ON) = 160 m RDS(ON) = 240 m @ VGS = -4.5 V @ VGS = -2.5 V @ VGS = -1.8 V Schottky: VF < 0.46 V @ 500 mA Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm RoHS Compliant A NC D A 1 2 3 6 5 4 C G S C D NC D MicroFET Symbol VDSS VGSS ID VRRM IO PD TJ, TSTG C G S Ratings -20 8 (Note 1a) -3.0 -6 30 (Note 1a) (Note 1a) (Note 1b) 1 1.4 0.7 -55 to +150 Units V V A V A W o Absolute Maximum Ratings TA = 25C unless otherwise noted Parameter MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current -Continuous -Pulsed Schottky Repetitive Peak Reverse voltage Schottky Average Forward Current Power dissipation for Single Operation Power dissipation for Single Operation Operating and Storage Junction Temperature Range C Thermal Characteristics R R R R JA JA JA JA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 86 173 86 140 o C/W Package Marking and Ordering Information Device Marking .853 Device FDFMA2P853 Reel Size 7inch 1 Tape Width 8mm Quantity 3000 units FDFMA2P853 Rev. D2 (W) (c)2008 Fairchild Semiconductor Corporation FDFMA2P853 Integrated P-Channel PowerTrench MOSFET and Schottky Diode Electrical Characteristics TA = 25C unless otherwise noted Symbol BVDSS BVDSS TJ IDSS IGSS Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions ID = -250 A VGS = 0 V, ID = -250 A, Referenced to 25 C VDS = -16 V, VGS = 8 V, VGS = 0 V VDS = 0 V Min Typ Max Units -20 -12 -1 100 V mV/ C A nA Off Characteristics On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 A VDS = VGS, ID = -250 A, Referenced to 25 C VGS = -4.5 V, ID = -3.0 A VGS = -2.5 V, ID = -2.5 A VGS = -1.8 V, ID = -1.0 A VGS= -4.5 V, ID = -3.0 A, TJ=125 C VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -3.0 A -0.4 -0.7 2 90 120 172 118 -1.3 V mV/ C 120 160 240 160 m ID(on) gFS On-State Drain Current Forward Transconductance -20 7 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, f = 1.0 MHz V GS = 0 V, 435 80 45 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 9 11 15 6 18 19 27 12 6 ns ns ns ns nC nC nC VDS = -10 V, VGS = -4.5 V ID = -3.0 A, 4 0.8 0.9 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = -1.1 A (Note 2) -1.1 -0.8 17 6 -1.2 A V ns nC IF = -3.0 A, dIF/dt = 100 A/s Schottky Diode Characteristics IR IR Reverse Leakage Reverse Leakage VR = 5 V VR = 20 V TJ = 25 C TJ = 125 C TJ = 25 C TJ = 85 C TJ = 125 C TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C 9.9 2.3 9.9 0.3 2.3 0.4 0.3 0.5 0.49 50 10 100 1 10 0.46 0.35 0.55 0.54 A mA A mA mA V V VF VF Forward Voltage Forward Voltage IF = 500mA IF = 1A 2 FDFMA2P853 Rev D2 (W) FDFMA2P853 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Electrical Characteristics TA = 25C unless otherwise noted Notes: 1. R JA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R JC is guaranteed by design while R JA is determined by the user's board design. (a) MOSFET R JA = 86C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) MOSFET R JA = 173C/W when mounted on a minimum pad of 2 oz copper (c) Schottky R JA = 86C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (d) Schottky R JA = 140C/W when mounted on a minimum pad of 2 oz copper a) 86oC/W when mounted on a 1in2 pad of 2 oz copper b) 173oC/W when mounted on a minimum pad of 2 oz copper c) 86oC/W when mounted on a 1in2 pad of 2 oz copper d) 140oC/W when mounted on a minimum pad of 2 oz copper Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% 3 FDFMA2P853 Rev. D2 (W) FDFMA2P853 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics 6 VGS = -4.5V -2.5V -2.0V -3.5V -3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.6 2.2 1.8 1.4 1 0.6 3 VGS = -1.5V 5 -ID, DRAIN CURRENT (A) 4 -1.8V 3 2 -1.5V -1.8V -2.0V -2.5V -3.0V -3.5V -4.5V 1 0 0 0.5 1 1.5 2 -VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 0 1 2 3 4 -ID, DRAIN CURRENT (A) 5 6 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 -50 RDS(ON), ON-RESISTANCE (OHM) ID = -3.0A VGS = -4.5V 0.28 ID = -1.5A 0.22 0.16 TA = 125oC 0.1 TA = 25oC 0.04 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 6 VDS = -5V 10 VGS = 0V -IS, REVERSE DRAIN CURRENT (A) 1 5 -ID, DRAIN CURRENT (A) 4 3 2 1 25oC TA = 125oC 0.1 TA = 125 C 0.01 25oC -55oC o -55 C o 0.001 0 0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4 FDFMA2P853 Rev. D2 (W) FDFMA2P853 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -3.0A 700 600 CAPACITANCE (pF) f = 1MHz VGS = 0 V 4 VDS = -5V -15V 500 400 300 200 100 Crss 3 -10V Ciss 2 Coss 1 0 0 1 2 3 Qg, GATE CHARGE (nC) 4 5 0 0 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics 10 IF, FORWARD LEAKAGE CURRENT(A) IR, REVERSE LEAKAGE CURRENT (A) 0.01 1 TJ = 125oC 0.001 TJ = 125oC 0.1 TJ = 25 C o 0.0001 TJ = 85oC 0.01 0.00001 TJ = 25oC 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 VF, FORWARD VOLTAGE (V) 0.7 0.8 0.000001 0 5 10 15 VR, REVERSE VOLTAGE (V) 20 Figure 9. Schottky Diode Forward Voltage Figure 10. Schottky Diode Reverse Current Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 5 FDFMA2P853 Rev. D2 (W) FDFMA2P853 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode Dimensional Outline and Pad Layout rev3 6 FDFMA2P853 Rev. D2 (W) FDFMA2P853 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM tm F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM The Power Franchise(R) tm PDP SPMTM Power-SPMTM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TM TinyPowerTM Saving our world, 1mW /W /kW at a timeTM TinyPWMTM SmartMaxTM TinyWireTM SMART STARTTM SerDesTM SPM(R) STEALTHTM SuperFETTM UHC(R) SuperSOTTM-3 Ultra FRFETTM SuperSOTTM-6 UniFETTM SuperSOTTM-8 VCXTM SupreMOSTM VisualMaxTM SyncFETTM (R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I36 7 FDFMA2P853 Rev. D2 (W) |
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